ds30055 rev. 6 - 2 1 of 3 mmbta63 / mmbta64 www.diodes.com diodes incorporated mmbta63 / mmbta64 pnp surface mount darlington transistor epitaxial planar die construction complementary npn types available (mmbta13 /mmbta14) ideal for medium power amplification and switching high current gain available in lead free/rohs compliant version (note 3) characteristic symbol mmbta63 mmbta64 unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -10 v collector current - continuous (note 1) i c -500 ma power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c c b e h g d d k mechanical data case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 5, on page 2 terminal connections: see diagram mmbta63 marking (see page 2): k2e, k3e mmbta64 marking (see page 2): k3e ordering & date code information: see page 2 weight: 0.008 grams (approx.) notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad l ayout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. 3. no purposefully added lead. electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-emitter breakdown voltage v (br)ceo -30 v i c = -100 av be = 0v collector cutoff current i cbo -100 na v cb = -30v, i e = 0 emitter cutoff current i ebo -100 na v eb = -10v, i c = 0 on characteristics (note 2) dc current gain mmbta63 mmbta64 mmbta63 mmbta64 h fe 5,000 10,000 10,000 20,000 i c = -10ma, v ce = -5.0v i c = -10ma, v ce = -5.0v i c = -100ma, v ce = -5.0v i c = -100ma, v ce = -5.0v collector-emitter saturation voltage v ce(sat) -1.5 v i c = -100ma, i b = -100 a base- emitter saturation voltage v be(sat) -2.0 v i c = -100ma, v ce = -5.0v small signal characteristics current gain-bandwidth product f t 125 mhz v ce = -5.0v, i c = -10ma, f = 100mhz sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm e b c features
ds30055 rev. 6 - 2 2 of 3 mmbta63 / mmbta64 www.diodes.com month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key kxe = product type marking code, ex: k2e = mmbta63 ym = date code marking y = year ex: n = 2002 kxe ym marking information device packaging shipping mmbta63-7 mmbta64-7 sot-23 3000/tape & reel (note 4) ordering information year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1 . 20 1 10 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current i c i b = 1000 t = 150c a t = 25c a t = -50c a 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0 notes: 4 for packaging details, go to our website at http:/ /www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part number, please add "-f" suffix to the part number above. exampl e: mmbta64-7-f.
ds30055 rev. 6 - 2 3 of 3 mmbta63 / mmbta64 www.diodes.com 100 1000 10000000 10000 100000 1000000 1 10 1000 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 3, dc current gain vs collector current v=5v ce t = 150c a t=25c a t = -50c a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1 . 6 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 4, base emitter voltage vs. collector current v=5v ce t = 150c a t=25c a t = -50c a 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 5, gain bandwidth product vs. collector current v=5v ce
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